Title :
Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency
Author :
King, R.R. ; Sinton, R.A. ; Swanson, R.M.
Author_Institution :
Stanford Univ., CA, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
The surface recombination velocity s for silicon surfaces passivated with thermal oxide was experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed
Keywords :
annealing; elemental semiconductors; oxidation; passivation; phosphorus; semiconductor doping; silicon; solar cells; Si:P-SiO2; SiO2; annealing; doping levels; emitter saturation current density; oxidation; passivation; quantum efficiency; saturation current; solar cell design; surface conditions; surface recombination velocity; transparent diffusions; Boron; Charge measurement; Current density; Current measurement; Density measurement; Energy measurement; Pollution measurement; Radiative recombination; Silicon; Surface contamination;
Journal_Title :
Electron Devices, IEEE Transactions on
