Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency

Author

King, R.R. ; Sinton, R.A. ; Swanson, R.M.

Author_Institution

Stanford Univ., CA, USA

Volume

37

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

365

Lastpage

371

Abstract

The surface recombination velocity s for silicon surfaces passivated with thermal oxide was experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J₀ of transparent diffusions for which the J₀ is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed

Keywords

annealing; elemental semiconductors; oxidation; passivation; phosphorus; semiconductor doping; silicon; solar cells; Si:P-SiO₂; SiO₂; annealing; doping levels; emitter saturation current density; oxidation; passivation; quantum efficiency; saturation current; solar cell design; surface conditions; surface recombination velocity; transparent diffusions; Boron; Charge measurement; Current density; Current measurement; Density measurement; Energy measurement; Pollution measurement; Radiative recombination; Silicon; Surface contamination;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.46368

Filename

46368