• DocumentCode
    876784
  • Title

    Photosensitivity and characterization of a solid-state integrating photodetector

  • Author

    Chamberlain, S.G. ; Aggarwal, V.K.

  • Volume
    7
  • Issue
    2
  • fYear
    1972
  • fDate
    4/1/1972 12:00:00 AM
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    A silicon solid-state integrating photodetector was designed, characterized, and photosensitivity expressions derived. It can detect light intensities of less than 10/SUP -12/ W.cm/SUP -2/ at 0.9-μm wavelength. Experimental results indicate that the device can detect objects at night.
  • Keywords
    Integrated circuits; Photodetectors; Semiconductor materials; Sensitivity; integrated circuits; photodetectors; semiconductor materials; sensitivity; Capacitance; Diodes; Leakage current; Lighting control; Object detection; Photodetectors; Photodiodes; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1972.1050271
  • Filename
    1050271