Title :
Photosensitivity and characterization of a solid-state integrating photodetector
Author :
Chamberlain, S.G. ; Aggarwal, V.K.
fDate :
4/1/1972 12:00:00 AM
Abstract :
A silicon solid-state integrating photodetector was designed, characterized, and photosensitivity expressions derived. It can detect light intensities of less than 10/SUP -12/ W.cm/SUP -2/ at 0.9-μm wavelength. Experimental results indicate that the device can detect objects at night.
Keywords :
Integrated circuits; Photodetectors; Semiconductor materials; Sensitivity; integrated circuits; photodetectors; semiconductor materials; sensitivity; Capacitance; Diodes; Leakage current; Lighting control; Object detection; Photodetectors; Photodiodes; Silicon; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1050271
