DocumentCode
876784
Title
Photosensitivity and characterization of a solid-state integrating photodetector
Author
Chamberlain, S.G. ; Aggarwal, V.K.
Volume
7
Issue
2
fYear
1972
fDate
4/1/1972 12:00:00 AM
Firstpage
202
Lastpage
204
Abstract
A silicon solid-state integrating photodetector was designed, characterized, and photosensitivity expressions derived. It can detect light intensities of less than 10/SUP -12/ W.cm/SUP -2/ at 0.9-μm wavelength. Experimental results indicate that the device can detect objects at night.
Keywords
Integrated circuits; Photodetectors; Semiconductor materials; Sensitivity; integrated circuits; photodetectors; semiconductor materials; sensitivity; Capacitance; Diodes; Leakage current; Lighting control; Object detection; Photodetectors; Photodiodes; Silicon; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1972.1050271
Filename
1050271
Link To Document