Title :
Evaluation of i.f. impedance of the diode from d.c. analysis
Author :
Anand, Y. ; Goldman, M.
Author_Institution :
Microwave Associates Inc., Burlington, USA
Abstract :
I.F. impedance has been calculated for S band silicon point-contact diodes. A correction term has been introduced in Baron´s theory to include the dissipative losses across the series resistance. This correction in Baron´s theory results in excellent agreement between theory and experiment.
Keywords :
microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680136
