• DocumentCode
    876911
  • Title

    Evaluation of i.f. impedance of the diode from d.c. analysis

  • Author

    Anand, Y. ; Goldman, M.

  • Author_Institution
    Microwave Associates Inc., Burlington, USA
  • Volume
    4
  • Issue
    9
  • fYear
    1968
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    I.F. impedance has been calculated for S band silicon point-contact diodes. A correction term has been introduced in Baron´s theory to include the dissipative losses across the series resistance. This correction in Baron´s theory results in excellent agreement between theory and experiment.
  • Keywords
    microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680136
  • Filename
    4210084