DocumentCode
876911
Title
Evaluation of i.f. impedance of the diode from d.c. analysis
Author
Anand, Y. ; Goldman, M.
Author_Institution
Microwave Associates Inc., Burlington, USA
Volume
4
Issue
9
fYear
1968
Firstpage
179
Lastpage
180
Abstract
I.F. impedance has been calculated for S band silicon point-contact diodes. A correction term has been introduced in Baron´s theory to include the dissipative losses across the series resistance. This correction in Baron´s theory results in excellent agreement between theory and experiment.
Keywords
microwave devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680136
Filename
4210084
Link To Document