DocumentCode :
877034
Title :
Low damage, Cl2-based gate recess etching for 0.3-μm gate-length AlGaN/GaN HEMT fabrication
Author :
Wen-Kai Wang ; Yu-Jen Li ; Cheng-Kuo Lin ; Yi-Jen Chan ; Guan-Ting Chen ; Jen-Inn Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Volume :
25
Issue :
2
fYear :
2004
Firstpage :
52
Lastpage :
54
Abstract :
The traditional dry etching for GaN using the Ar/Cl2 mixture gas in the reactive ion etching system has been developed. In order to reduce the surface damage, the additional CH4 gas is introduced. However, this approach still has the problems of the residual surface damage and low etching selectivity between the AlGaN and GaN materials. Therefore, the following rapid thermal annealing (RTA) at 700/spl deg/C is necessary to recover the surface properties. We proposed the Ar/Cl2/CH4/O2 for the GaN gate-recess etching in AlGaN/GaN HEMTs fabrication, which achieves a low surface damage and a high etching selectivity simultaneously. The 0.3 μm gate-length AlGaN/GaN HEMTs present a transconductance of 230 mS/mm, an fT of 48 GHz, and fmax of 60 GHz, respectively.
Keywords :
III-V semiconductors; aluminium compounds; dislocation etching; gallium compounds; high electron mobility transistors; nitrogen compounds; wide band gap semiconductors; AlGaN-GaN; Ar; Ar-Cl mixture ga; CH/sub 4/ gas; Cl/sub 2/; Cl/sub 2/-based plasma; HEMT fabrication; O/sub 2/; dry etching; gate recess etching; low etching selectivity; rapid thermal annealing; reactive ion etching system; residual surface damage; surface properties; Aluminum gallium nitride; Argon; Dry etching; Fabrication; Gallium nitride; HEMTs; Plasma applications; Plasma materials processing; Plasma properties; Plasma temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.822669
Filename :
1263624
Link To Document :
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