Title :
Microwave silicon Schottky-barrier field-effect transistor
Author :
Drangeid, K.E. ; Jaggi, R. ; Middelhoek, S. ; Mohr, Th. ; Moser, A. ; Sasso, Grazia ; Sommerhalder, R. ; Wolf, Philip
Author_Institution :
IBM Zÿrich Research Laboratory, Rÿschlikon, Switzerland
Abstract :
Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 ¿m wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz.
Keywords :
microwave devices; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680284
