Vertical RESURF diodes manufactured by deep-trench etch and vapor-phase doping

Author

Rochefort, C. ; van Dalen, R.

Author_Institution

Philips Res. Leuven, Belgium

Volume

25

Issue

2

fYear

2004

Firstpage

73

Lastpage

75

Abstract

A new technique to manufacture vertical reduced surface field (RESURF)/superjunction devices is presented, in which the alternating p-n-junctions in the drift region are formed by a combination of a trench etch and vapor-phase doping process. Electrical measurements on Schottky RESURF diodes exhibit breakdown voltages up to 160 V with an on-resistance of 182 m/spl Omega/.mm² using a 10 μm n-type drift region doped at 7.5/spl middot/10/sup 15/ cm/sup -3/. We show experimentally that such a device concept is able to display specific on-resistance well below the one-dimensional silicon limit and is a good candidate to manufacture vertical power RESURF MOSFETs.

Keywords

etching; semiconductor diodes; semiconductor doping; vapour deposition; Schottky RESURF diodes; alternating p-n-junctions; breakdown voltages; deep-trench etching; drift region; on-resistance; one-dimensional silicon; power MOSFET; reduced surface field; superjunction devices; vapor-phase doping; vertical power RESURF MOSFETs; Boron; Doping; Electric variables measurement; Etching; MOSFETs; Manufacturing processes; Scanning electron microscopy; Schottky diodes; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.822649

Filename

1263631