DocumentCode :
877115
Title :
A novel high-performance bipolar monolithic memory cell
Author :
Farber, A.S. ; Schlig, E.S.
Volume :
7
Issue :
4
fYear :
1972
Firstpage :
297
Lastpage :
298
Abstract :
A novel memory cell is described that is used in several IBM processors. It is fast, insensitive to disturbance by reading and half-selects, and delivers a large sense signal.
Keywords :
Monolithic integrated circuits; Semiconductor storage devices; monolithic integrated circuits; semiconductor storage devices; Buffer storage; Circuits; Delay; Diodes; Impedance; Latches; Pulse amplifiers; Signal processing; Switches; Writing;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1972.1050302
Filename :
1050302
Link To Document :
بازگشت