DocumentCode :
877116
Title :
On the Pressure Dependence of Microwave Crystal Rectifiers (Correspondence)
Author :
Matthei, W.
Volume :
6
Issue :
1
fYear :
1958
fDate :
1/1/1958 12:00:00 AM
Firstpage :
112
Lastpage :
112
Abstract :
During the past couple of years, as a result of government interest, silicon microwave crystal rectifiers have not only decreased their noise figures but also have increased their resistance to adverse environments; i.e., high burnout, high temperature, excessive humidity.
Keywords :
Atmospheric measurements; Circuit noise; Frequency measurement; Impedance; Microwave measurements; Noise figure; Pressure measurement; Rectifiers; Signal to noise ratio; Silicon;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IRE Transactions on
Publisher :
ieee
ISSN :
0097-2002
Type :
jour
DOI :
10.1109/TMTT.1958.1125194
Filename :
1125194
Link To Document :
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