• DocumentCode
    877170
  • Title

    High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts

  • Author

    Chao, Tien-Sheng ; Lee, Yao-Jen ; Huang, Tiao-Yuan

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    25
  • Issue
    2
  • fYear
    2004
  • Firstpage
    86
  • Lastpage
    88
  • Abstract
    In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.
  • Keywords
    MOSFET; Schottky barriers; electrical contacts; DTMOS; Schottky substrate junction; driving current; dynamic threshold voltage MOSFET; high-temperature application; high-voltage application; reverse Schottky barrier; substrate contacts; subthreshold slope; Chaos; Forward contracts; MOSFET circuits; Plasma temperature; Schottky barriers; Schottky diodes; Silicon; Substrates; Threshold voltage; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.822656
  • Filename
    1263635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877170