• DocumentCode
    877225
  • Title

    Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation

  • Author

    Chang, Yao-Wen ; Lu, Tao-Cheng ; Pan, Sam ; Lu, Chih-Yuan

  • Author_Institution
    Macronix Int. Ltd., Hsinchu, Taiwan
  • Volume
    25
  • Issue
    2
  • fYear
    2004
  • Firstpage
    95
  • Lastpage
    97
  • Abstract
    In this letter, we propose a macromodeling approach for the nitride-based trapping storage Flash EEPROM cell with intriguing 2nd-bit effect. Both unusual ID-VD and ID-VG characteristics of this 2-bit Flash cell can be accurately modeled by the macromodel. It also provides insights into the special device characteristics of the programmed cell. Furthermore, we can use this model to correctly evaluate the read speed degradation resulting from 2nd-bit effect.
  • Keywords
    flash memories; integrated circuit modelling; nitridation; 2nd-bit effect; NROM; flash EEPROM cell; macromodeling; multiple virtual ground AND; nitride-based trapping storage; programmed cell; read speed degradation; two-bit operation; Degradation; Dielectrics; EPROM; Electron traps; Flash memory; Helium; Nonvolatile memory; Solids; Transconductance; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.822671
  • Filename
    1263638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877225