A continuous, analytic drain-current model for DG MOSFETs

Author

Taur, Yuan ; Liang, Xiaoping ; Wang, Wei ; Lu, Huaxin

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA, USA

Volume

25

Issue

2

fYear

2004

Firstpage

107

Lastpage

109

Abstract

This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson\´s equation, and current continuity equation without the charge-sheet approximation. The entire I_ds(V_g,V_ds) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.

Keywords

MOSFET; Poisson equation; semiconductor device models; Poissons equation; charge-sheet approximation; closed-form solutions; compact modeling; current continuity equation; double-gate MOSFETs; drain-current model; noncharge-sheet phenomenon; transistors; volume inversion; Closed-form solution; Electron mobility; Integral equations; MOSFETs; Numerical simulation; Permittivity; Physics; Poisson equations; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.822661

Filename

1263642