GaAs MESFET device dependences on ion-implant tilt and rotation angles

Author

Rosemblatt, D.H. ; Hitchens, W.R. ; Anholt, Robert E. ; Sigmon, Thomas W.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

Volume

9

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

139

Abstract

Lightly Cr-doped liquid-encapsulated Czochralski (LEC) GaAs wafers were implanted with 5*10/sup 12/ 100-keV Si/sup 29/ ions/cm/sup 2/ at tilt angles between 0 and 13 degrees and at rotation angles between 0 and 45 degrees C. Capacitance-voltage measurements were then made to determine electron profiles. It was found that cross-wafer device uniformity can be improved using implant tilt angles greater than 9 degrees . For microwave MESFET devices, the maximum transconductances at low I/sub DS/ are achieved using tilt angles greater than 6 degrees and rotation angles greater than 30 degrees .<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 100 keV; GaAs:Cr,Si; cross-wafer device uniformity; electron profiles; ion-implant tilt; liquid-encapsulated Czochralski; microwave MESFET devices; rotation angles; transconductances; Capacitance measurement; Capacitance-voltage characteristics; Electrons; Gallium arsenide; Implants; Impurities; Laboratories; MESFETs; Rotation measurement; Tail;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2068

Filename

2068