DocumentCode :
877390
Title :
The capacitance of double saturation n Ge—n Si heterojunctions
Author :
Donnelly, J.P. ; Milnes, A.G.
Volume :
53
Issue :
12
fYear :
1965
Firstpage :
2109
Lastpage :
2109
Keywords :
Capacitance; Diodes; Germanium; Grain boundaries; Heterojunctions; Impurities; Interface states; Lattices; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4488
Filename :
1446418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=877390
