DocumentCode

877390

Title

The capacitance of double saturation n Ge—n Si heterojunctions

Author

Donnelly, J.P. ; Milnes, A.G.

Volume

53

Issue

12

fYear

1965

Firstpage

2109

Lastpage

2109

Keywords

Capacitance; Diodes; Germanium; Grain boundaries; Heterojunctions; Impurities; Interface states; Lattices; Silicon; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1965.4488

Filename

1446418