DocumentCode :
877444
Title :
FET drain-to-gate capacitance at pinch-off
Author :
Trofimenkoff, F.N.
Volume :
53
Issue :
12
fYear :
1965
Firstpage :
2112
Lastpage :
2112
Keywords :
Aerospace electronics; Aircraft; Capacitance; FETs; Fabrication; Impurities; Performance evaluation; Solid state circuits; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4492
Filename :
1446422
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=877444
