Title :
Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology
Author :
Balasubramanian, Anupama ; Amusan, Oluwole A. ; Bhuva, Bharat L. ; Reed, Robert A. ; Sternberg, Andrew L. ; Massengill, Lloyd W. ; McMorrow, Dale ; Nation, Sarah A. ; Melinger, J.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
The presence of single event (SE) induced interconnect crosstalk has been measured and demonstrated experimentally using single and two photon laser absorption techniques in the IBM 90 nm CMOS9SF process. The dependency of SE interconnect crosstalk on the interconnect length and on the amount of deposited charge has been quantified through 3D mixed-mode simulations at this technology for two different supply voltages. Experimental and simulation results show this effect to increase the cross-section susceptible to SEs requiring careful design considerations to assure desired hardness levels.
Keywords :
CMOS integrated circuits; crosstalk; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit noise; radiation hardening (electronics); 3D mixed-mode simulations; CMOS9SF process; IC design considerations; SE interconnect crosstalk; hardness level; interconnect crosstalk measurement; single event induced interconnect crosstalk analysis; single photon laser absorption technique; size 90 nm; supply voltages; two photon laser absorption technique; CMOS process; CMOS technology; Capacitance; Circuits; Computational modeling; Crosstalk; Photonics; Pulsed laser deposition; Single event upset; Voltage; Complementary metal-oxide-semiconductor (CMOS); interconnect crosstalk; single event (SE); technology computer aided design (TCAD);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2000781
