Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology

Author

Balasubramanian, Anupama ; Amusan, Oluwole A. ; Bhuva, Bharat L. ; Reed, Robert A. ; Sternberg, Andrew L. ; Massengill, Lloyd W. ; McMorrow, Dale ; Nation, Sarah A. ; Melinger, J.S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

55

Issue

4

fYear

2008

Firstpage

2079

Lastpage

2084

Abstract

The presence of single event (SE) induced interconnect crosstalk has been measured and demonstrated experimentally using single and two photon laser absorption techniques in the IBM 90 nm CMOS9SF process. The dependency of SE interconnect crosstalk on the interconnect length and on the amount of deposited charge has been quantified through 3D mixed-mode simulations at this technology for two different supply voltages. Experimental and simulation results show this effect to increase the cross-section susceptible to SEs requiring careful design considerations to assure desired hardness levels.

Keywords

CMOS integrated circuits; crosstalk; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit noise; radiation hardening (electronics); 3D mixed-mode simulations; CMOS9SF process; IC design considerations; SE interconnect crosstalk; hardness level; interconnect crosstalk measurement; single event induced interconnect crosstalk analysis; single photon laser absorption technique; size 90 nm; supply voltages; two photon laser absorption technique; CMOS process; CMOS technology; Capacitance; Circuits; Computational modeling; Crosstalk; Photonics; Pulsed laser deposition; Single event upset; Voltage; Complementary metal-oxide-semiconductor (CMOS); interconnect crosstalk; single event (SE); technology computer aided design (TCAD);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2000781

Filename

4636882