Title :
Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays
Author :
Gasperin, Alberto ; Wrachien, Nicola ; Paccagnella, Alessandro ; Ottogalli, Federica ; Corda, Ugo ; Fuochi, Piergiorgio ; Lavalle, Marco
Author_Institution :
Dipt. di Ing. dellTn- formazione, Univ. di Padova, Padova
Abstract :
We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line selector MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.
Keywords :
MOSFET; flash memories; radiation effects; PCM array; RESET operation; SET; ionizing radiation; phase change memory; total ionizing dose effect; word-line selector MOSFET; CMOS technology; Electrons; Flash memory; Integrated circuit technology; Ionizing radiation; Nonvolatile memory; Phase change materials; Phase change memory; Phased arrays; Radiation effects; Chalcogenide materials; GST; non-volatile memories; phase change memory; radiation effects; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.920425
