DocumentCode
877595
Title
SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges
Author
Luu, Aurore ; Miller, Florent ; Poirot, Patrick ; Gaillard, Rémi ; Buard, Nadine ; Carrière, Thierry ; Austin, Patrick ; Bafleur, Marise ; Sarrab, Gérard
Author_Institution
Eur. Aeronaut. Defence & Space Co., Suresnes
Volume
55
Issue
4
fYear
2008
Firstpage
2166
Lastpage
2173
Abstract
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
Keywords
power MOSFET; backside laser irradiations; device simulations; high-energy heavy ion testing; power MOSFETs; Analytical models; Application software; Guidelines; MOSFETs; Manufacturing; Neutrons; Power lasers; Protons; Software testing; Strips; Commercial power MOSFETs; heavy ion tests; laser tests; single-event burnout (SEB); software simulations;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.921934
Filename
4636889
Link To Document