Design of precision capacitors for analog applications

Author

St.Onge, S.A. ; Franz, Sheila G. ; Puttlitz, Albert F. ; Kalinoski, Annette ; Johnson, Brian E. ; El-Kareh, Badih

Author_Institution

IBM Technol. Products, Essex Junction, VT, USA

Volume

15

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1064

Lastpage

1071

Abstract

Two capacitors incorporated in a baseline BiCMOS technology without added process complexity are described and analyzed. The first is formed between degenerately doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients

Keywords

BiCMOS integrated circuits; analogue processing circuits; capacitors; integrated circuit technology; semiconductor-insulator-semiconductor structures; BiCMOS technology; Si-SiO₂-Si capacitors; analog applications; capacitance ratio precision; capacitor voltage coefficient; oxide thickness; precision capacitors; surface dopant concentration; voltage coefficient of capacitance; BiCMOS integrated circuits; CMOS technology; Capacitance; Dielectrics; Linearity; Low voltage; MOS capacitors; Silicon compounds; Silicon on insulator technology; Temperature;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.206932

Filename

206932