Space-charge-limited insulated-gate surface-channel transistor (s.c.l. i.g.f.e.t.)

Preliminary experimental results are reported on insulated-gate field-effect transistors made in high-resistivity (near-intrinsic silicon substrates. Operation occurs under space-charge-limited conditions, and maximum transconductance and minimum parasitic capacitances for this kind of device are thus obtained. Some implications for integrated monolithic microelectronics are discussed.