DocumentCode
877846
Title
Random Telegraph Signals in Proton Irradiated CCDs and APS
Author
Hopkinson, G.R. ; Goiffon, V. ; Mohammadzadeh, A.
Author_Institution
Surrey Satellite Technol., Ltd., Sevenoaks
Volume
55
Issue
4
fYear
2008
Firstpage
2197
Lastpage
2204
Abstract
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type. A large fraction of the defects are multi- rather than 2-level, suggesting a mechanism related to defect clusters being formed from initial single proton events.
Keywords
CCD image sensors; CMOS image sensors; proton effects; telegraphy; CCD; CMOS active pixel sensor; activation energy; dark signal fluctuations; defect clusters; electron volt energy 1.5 MeV; electron volt energy 10 MeV; electron volt energy 60 MeV; proton irradiation; random telegraph signals; time constants; CMOS image sensors; Charge coupled devices; Fluctuations; Protons; Satellites; Sensor arrays; Space technology; Telegraphy; Temperature; Testing; Image sensors; proton radiation effects; radiation effects; satellite applications;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2000764
Filename
4636913
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