Title :
Random Telegraph Signals in Proton Irradiated CCDs and APS
Author :
Hopkinson, G.R. ; Goiffon, V. ; Mohammadzadeh, A.
Author_Institution :
Surrey Satellite Technol., Ltd., Sevenoaks
Abstract :
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type. A large fraction of the defects are multi- rather than 2-level, suggesting a mechanism related to defect clusters being formed from initial single proton events.
Keywords :
CCD image sensors; CMOS image sensors; proton effects; telegraphy; CCD; CMOS active pixel sensor; activation energy; dark signal fluctuations; defect clusters; electron volt energy 1.5 MeV; electron volt energy 10 MeV; electron volt energy 60 MeV; proton irradiation; random telegraph signals; time constants; CMOS image sensors; Charge coupled devices; Fluctuations; Protons; Satellites; Sensor arrays; Space technology; Telegraphy; Temperature; Testing; Image sensors; proton radiation effects; radiation effects; satellite applications;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2000764
