DocumentCode

877909

Title

Effect of electron irradiation on N-channel MOS transistors

Author

Stanley, A.G.

Volume

53

Issue

12

fYear

1965

Firstpage

2150

Lastpage

2150

Keywords

Dynamic equilibrium; Electron traps; Leakage current; MOSFETs; Plasma waves; Temperature; US Department of Energy; Voltage; X-rays;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1965.4533

Filename

1446463