DocumentCode :
877909
Title :
Effect of electron irradiation on N-channel MOS transistors
Author :
Stanley, A.G.
Volume :
53
Issue :
12
fYear :
1965
Firstpage :
2150
Lastpage :
2150
Keywords :
Dynamic equilibrium; Electron traps; Leakage current; MOSFETs; Plasma waves; Temperature; US Department of Energy; Voltage; X-rays;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4533
Filename :
1446463
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=877909
