Title :
Test Procedures for Proton-Induced Single Event Latchup in Space Environments
Author :
Felix, James A. ; Schwank, James R. ; Shaneyfelt, Marty R. ; Baggio, Jacques ; Paillet, Philippe ; Ferlet-Cavrois, Veronique ; Dodd, Paul E. ; Girard, Sylvain ; Blackmore, Ewart W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
The effect of high energy proton irradiation and angle of incidence on single-event latchup (SEL) hardness is investigated as a function of temperature and power supply voltage to determine worst-case hardness assurance test conditions for space environments. SRAMs from several vendors were characterized for single-event latchup SEL hardness at proton energies from 20 to 500 MeV at temperatures of 25 degC and 80 degC, and at both normal and grazing angles of incidence. For all SRAMs investigated, the largest SEL cross section is observed for irradiation with protons with energies larger than 200 MeV. In addition, it is shown that for proton with energies ges 400 MeV, there is not a significant increase in SEL cross section for grazing angles of incidence compared to normal incidence irradiation. Based on the results of several years of research, in addition to these new results, we propose a hardness assurance test procedure for qualifying parts for use in proton-rich space environments.
Keywords :
SRAM chips; proton effects; radiation hardening (electronics); space vehicle electronics; SRAM; electron volt energy 20 MeV to 500 MeV; high energy proton irradiation; proton-induced single event latchup; temperature 25 C; temperature 80 C; Ionization; Laboratories; Power supplies; Protons; Radiation effects; Random access memory; Single event upset; Temperature; Testing; Voltage; COTS; SEU; SRAM; hardness assurance; proton; radiation effects; single event; single-event latchup (SEL);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2000773