DocumentCode
877954
Title
n-channel ion-implanted enhancement/depletion FET circuit and fabrication technology
Author
Forbes, Leonard
Volume
8
Issue
3
fYear
1973
fDate
6/1/1973 12:00:00 AM
Firstpage
226
Lastpage
230
Abstract
n-channel enhancement/depletion technology and circuits are described. The threshold voltage adjustment to form the enhancement- and depletion-mode devices are achieved by ion implantation. This allows optimization of the performance and circuit density. The calculated and experimentally observed speed-power product is 10 pJ/pF with a single +5-V power supply. Inversion of the field region on the high resistivity p-type substrate is completely eliminated by the use of an implanted field shield.
Keywords
Field effect transistors; Integrated circuit production; Ion implantation; Monolithic integrated circuits; Semiconductor device manufacture; field effect transistors; integrated circuit production; ion implantation; monolithic integrated circuits; semiconductor device manufacture; Capacitance; Circuit stability; Conductivity; FET circuits; Fabrication; Ion implantation; Power supplies; Resistors; Temperature dependence; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1973.1050379
Filename
1050379
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