Evidence of transit-time effects in silicon n-v-n space-charge-limited current (s.c.l.c.) solid-state devices

Transit-time effects have been observed in silicon n-v-n s.c.l.c. solid-state devices, with the reciprocal transit-time frequency being bias dependent, and the oscillatory behaviour of the device high-frequency conductance being relatively reduced as expected. For n-v-n (silicon) s.c.l.c. solid-state devices, these results appear to be the first experimental evidence of such effects.