High-bias-voltage operation of GaAs transferred-electron oscillators

Pulsed operation of epitaxial GaAs transferred-electron oscillators at a bias voltage of ten times the threshold voltage is described. The operating frequency, 14.1 GHz, was close to the transit-time frequency of 13 GHz. A maximum power output of 800 mW at 10% efficiency was obtained at 1% duty cycle. The power output and efficiency decreased with increasing duty cycle, and this decrease is attributed to the decrease in the peak/valley ratio of GaAs with increasing lattice temperature.