Title :
Current Leakage Evolution in Partially Gate Ruptured Power MOSFETs
Author :
Scheick, Leif ; Edmonds, Larry ; Selva, Luis ; Chen, Yuan
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
Keywords :
avalanche breakdown; leakage currents; power MOSFET; semiconductor device breakdown; SEGR; avalanche breakdown; current leakage; gate ruptured power MOSFETs; microbreak mode; single-event gate rupture; thermal runaway; Avalanche breakdown; Degradation; Electric breakdown; Event detection; Leakage current; MOSFETs; Nanoscale devices; Space vehicles; Testing; Voltage; Avalanche breakdown; SEGR; power MOSFET; thermal runaway;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2001008
