Title :
High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy
Author :
Schubert, E. Frederic ; Tsang, W.T. ; Fueur, M.D. ; Mankiewich, P.M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
SiO/sub 2/ insulator is on top of an InP layer; current transport occurs, however, an in adjacent n-type Ga/sub 0.47/In/sub 0.53/As:Sn layer. A transconductance of g/sub m/=300 mS/mm is obtained from depletion-mode MISFETs with a gate length of 1.2 mu m. This MIS (metal-insulator-semiconductor) junction has a symmetric current-voltage characteristic and a low-leakage current of approximately 1 nA at +or-2 V. High-frequency S-parameter measurements performed b probing devices on the wafers yield a unity current gain frequency of F/sub t/=22.2 GHz and a maximum frequency of oscillation f/sub max/=27 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor epitaxial layers; 1.2 micron; 22.2 GHz; 27 GHz; Ga/sub 0.47/In/sub 0.53/As-InP; S-parameter measurements; chemical beam epitaxy; current transport; depletion-mode MISFETs; gate length; low-leakage current; metal-insulator-semiconductor field-effect transistors; oscillation; probing; symmetric current-voltage characteristic; transconductance; unity current gain; Current measurement; Current-voltage characteristics; Frequency measurement; Gain measurement; Indium phosphide; Insulation; MISFETs; Metal-insulator structures; Performance evaluation; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
