• DocumentCode
    878119
  • Title

    First Evaluation of Proton Irradiation Effects on InAs/InP Quantum Dash Laser Diodes Emitting at 1.55 \\mu\\hbox {m}

  • Author

    Boutillier, Mathieu ; Gauthier-Lafaye, Olivier ; Bonnefont, Sophie ; Lelarge, Francois ; Dagens, B. ; Make, D. ; Gouezigou, Odile Le ; Rousseau, B. ; Accard, A. ; Poingt, F. ; Pommereau, F. ; Lozes-Dupuy, Francois

  • Author_Institution
    Centre Nat. de la Rech. Sci., Univ. de Toulouse, Toulouse
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • Firstpage
    2243
  • Lastpage
    2247
  • Abstract
    Quantum dash lasers were irradiated for the first time, using 31-MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
  • Keywords
    III-V semiconductors; indium compounds; proton effects; quantum dot lasers; InAs-InP; electron volt energy 31 MeV; optical communications; proton irradiation effects; quantum dash laser diodes; wavelength 1.55 mum; Diode lasers; Fiber lasers; Indium phosphide; Optical receivers; Protons; Quantum dot lasers; Quantum dots; Quantum well lasers; Robustness; Semiconductor lasers; Proton radiation effects; quantum dots; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2000848
  • Filename
    4636941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878119