• DocumentCode
    878157
  • Title

    Monolithic integration of InAs photodiode and GaAs MESFET

  • Author

    Dobbelaere, Wim ; De Raedt, W. ; De Boeck, Jo ; Mertens, Robert ; Borghs, G.

  • Author_Institution
    Interuniv. Micro-Electron. Center vzw, Leuven, Belgium
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    372
  • Lastpage
    374
  • Abstract
    InAs pn diodes were grown in wells pre-etched in GaAs substrates. Despite the large lattice mismatch of 7.2% between GaAs and InAs, good photodiode characteristics were obtained with 77 K resistance area products of 70 Omega cm2 and a peak detectivity of 1.25*1011 cm square root (Hz)/W at 2.95 mu m wavelength. GaAs MESFETs were fabricated next to the embedded detectors demonstrating for the first time the feasibility of the monolithic integration of InAs photodiodes and GaAs electronic circuits.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; photodiodes; 2.95 micron; InAs-GaAs; MESFETs; embedded detectors; lattice mismatch; monolithic integration; peak detectivity; photodiode characteristics; resistance area products;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920233
  • Filename
    126372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878157