DocumentCode :
878220
Title :
X-Band Diode Limiting (Correspondence)
Author :
Garver, R.V. ; Tseng, D.Y.
Volume :
9
Issue :
2
fYear :
1961
fDate :
3/1/1961 12:00:00 AM
Firstpage :
202
Lastpage :
202
Abstract :
Broad-band, matched, low power, instantaneous, passive, X--band diode limiting has been demonstrated. The limiter, which uses standard microwave components, is an outgrowth of point contact germanium diode microwave switch research. In fact, the hybrid-tee switch makes a very good narrow-band limiter under the condition of zero bias voltage on the crystals (biasing terminals short circuited). The output power under these conditions is limited to 0.5 mw² for incident power up to 30 mw, deduced from Fig. 9 of Garver, et al. However, the bandwidth of the hybrid-tee switch when used as a limiter is insufficient for many applications such as limiting the amplitude of a 0.2-µsec magnetron pulse or flattening a frequency-modulated klystron mode.
Keywords :
Bandwidth; Contacts; Crystals; Diodes; Germanium; Narrowband; Power generation; Switches; Switching circuits; Zero voltage switching;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IRE Transactions on
Publisher :
ieee
ISSN :
0097-2002
Type :
jour
DOI :
10.1109/TMTT.1961.1125303
Filename :
1125303
Link To Document :
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