Title :
Electron saturation velocity variation in InGaAs and GaAs channel MODFETs for gate length to 550 AA
Author :
de la Houssaye, P.R. ; Allee, D.R. ; Pao, Y.C. ; Schlom, D.G. ; Harris, J.S., Jr. ; Pease, R.F.W.
Author_Institution :
Stanford Electron Lab., Stanford Univ., CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mu m and 550 AA and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0.15 mu m, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 5.5E-2 to 2 micron; DC characterized; GaAs; InGaAs; MODFETs; electron saturation velocity; gate length; peak transconductance; room temperature; saturation velocity; Buffer layers; Electrons; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Substrates; Superlattices; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
