Title :
Nano-Watt silicon-on-sapphire ADC using 2C-1C capacitor chain
Author :
Fu, Z. ; Weerakoon, P. ; Culurciello, E.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
3/16/2006 12:00:00 AM
Abstract :
An analogue-to-digital converter (ADC) in a 0.5 μm silicon-on-sapphire CMOS technology is reported. This innovative ADC uses a 2C-1C capacitor chain and a switched capacitor comparator. The ADC is capable of sampling at 409 kS/s, consuming 900 nW at 1.1 V power supply and 1.35 μW at 1.5 V. It uses an active area of 300×700 μm2 and 640×1070 μm2 with pads.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); elemental semiconductors; low-power electronics; sapphire; silicon; silicon-on-insulator; switched capacitor networks; 0.5 micron; 1.1 V; 1.35 muW; 1.5 V; 2C-1C capacitor chain; 900 nW; CMOS technology; Si-Al2O3; analogue-to-digital converter; nano-watt ADC; silicon-on-sapphire; switched capacitor comparator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060109
