The Effects of Mg Back Diffusion Capping Layers on the Performance Enhancement of Blue Light Emitting Diodes With a p-InGaN Last Barrier

Author

Binglei Fu ; Xiangxu Feng ; Zhao Si ; Zhe Liu ; Zhiqiang Liu ; Naixin Liu ; Xuecheng Wei ; Hongxi Lu ; Jinmin Li ; Junxi Wang

Author_Institution

R&D Center for Semicond. Lighting, Beijing, China

Volume

11

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

60

Lastpage

64

Abstract

The effects of thin Mg back diffusion capping layers on the performance enhancement of InGaN/GaN light emitting diodes (LEDs) with p-InGaN last barrier are investigated experimentally and numerically. By inserting a thin capping layer before the p-InGaN last barrier, the Mg back diffusion effect could be effectively suppressed and the optical performance of LEDs could be enhanced due to the improved hole injection and reduced electron leakage. What is more, the p-InGaN LED with GaN capping layer showed further reduced efficiency droop compared with that with InGaN capping layer as a result of the more uniform hole distribution in active layers.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; magnesium; wide band gap semiconductors; InGaN-GaN-Mg; LED; active layers; back diffusion capping layer effect; blue light emitting diode; improved hole injection; optical performance; reduced electron leakage; uniform hole distribution; Art; Atomic layer deposition; Charge carrier processes; Gallium nitride; Light emitting diodes; Radiative recombination; GaN; InGaN; Mg-doping; droop; light-emitting diode (LED);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2360552

Filename

6911932