DocumentCode :
878307
Title :
Total Dose Effects on Error Rates in Linear Bipolar Systems
Author :
Buchner, Stephen ; McMorrow, Dale ; Bernard, Muriel ; Roche, Nicolas ; Dusseau, Laurent
Author_Institution :
Goddard Space Flight Center, Perot Syst. Gov. Services, NASA, Greenbelt, MD
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
2055
Lastpage :
2062
Abstract :
The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect the single event transient (SET) system error rates in a radiation environment. If the transients are broadened by total ionizing dose (TID) exposure, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.
Keywords :
bipolar integrated circuits; errors; operational amplifiers; radiation effects; radiation hardening (electronics); transients; SET; dose effect; error rate; hardness; linear bipolar circuit; operation amplifier; single event transient system; total ionizing dose radiation; Anisotropic magnetoresistance; Degradation; Error analysis; Integrated circuit reliability; Ionizing radiation; Operational amplifiers; Probes; Protons; Pulse measurements; Shape; Bipolar circuit; error rate; single event transient; total dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.916061
Filename :
4636958
Link To Document :
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