• DocumentCode
    878311
  • Title

    Temperature dependence of the bandwidth of buried heterostructure distributed feedback lasers

  • Author

    Wand, S.J. ; Shen, T.M. ; Dutta, N.K.

  • Author_Institution
    AT&T Bell Lab., Murray Hill, NJ, USA
  • Volume
    1
  • Issue
    9
  • fYear
    1989
  • Firstpage
    258
  • Lastpage
    260
  • Abstract
    Reports that the etched-mesa buried-heterostructure distributed-feedback lasers ( lambda = 1.3 mu m) fabricated using semi-insulating InP blocking lasers have bandwidths in the 12-17 GHz range at 20 degrees C. 15 mW (18 GHz at 20 mW). The bandwidth decreases with increasing temperature at low powers. For the practical range of interest from 20 degrees C to 40 degrees C, the observed decrease in bandwidth is 1.0+or-0.5 GHz at 15 mW output power. A large sublinearity in the light-versus-current characteristics is generally associated with a rollover in the bandwidth power curve.<>
  • Keywords
    distributed feedback lasers; laser beams; semiconductor junction lasers; 1.3 micron; 12 to 17 GHz; 15 mW; 18 GHz; 20 degC; 20 mW; 20 to 40 degC; InGaAsP; InP; bandwidth decreases; bandwidth power curve; bandwidths; etched-mesa buried-heterostructure distributed-feedback lasers; increasing temperature; light-versus-current characteristics; low powers; output power; practical range; rollover; semi-insulating InP blocking layers; semiconductor lasers; sublinearity; Bandwidth; Distributed feedback devices; Heat sinks; Laser feedback; Power generation; Power lasers; Power measurement; Semiconductor lasers; Temperature dependence; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.43338
  • Filename
    43338