DocumentCode
878311
Title
Temperature dependence of the bandwidth of buried heterostructure distributed feedback lasers
Author
Wand, S.J. ; Shen, T.M. ; Dutta, N.K.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
1
Issue
9
fYear
1989
Firstpage
258
Lastpage
260
Abstract
Reports that the etched-mesa buried-heterostructure distributed-feedback lasers ( lambda = 1.3 mu m) fabricated using semi-insulating InP blocking lasers have bandwidths in the 12-17 GHz range at 20 degrees C. 15 mW (18 GHz at 20 mW). The bandwidth decreases with increasing temperature at low powers. For the practical range of interest from 20 degrees C to 40 degrees C, the observed decrease in bandwidth is 1.0+or-0.5 GHz at 15 mW output power. A large sublinearity in the light-versus-current characteristics is generally associated with a rollover in the bandwidth power curve.<>
Keywords
distributed feedback lasers; laser beams; semiconductor junction lasers; 1.3 micron; 12 to 17 GHz; 15 mW; 18 GHz; 20 degC; 20 mW; 20 to 40 degC; InGaAsP; InP; bandwidth decreases; bandwidth power curve; bandwidths; etched-mesa buried-heterostructure distributed-feedback lasers; increasing temperature; light-versus-current characteristics; low powers; output power; practical range; rollover; semi-insulating InP blocking layers; semiconductor lasers; sublinearity; Bandwidth; Distributed feedback devices; Heat sinks; Laser feedback; Power generation; Power lasers; Power measurement; Semiconductor lasers; Temperature dependence; Wavelength measurement;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.43338
Filename
43338
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