Title :
HBV tripler with 21% efficiency at 102 GHz
Author :
Vukusic, J. ; Alderman, B. ; Emadi, T.A. ; Sadeghi, M. ; Olsen, A. Ø ; Bryllert, T. ; Stake, J.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
3/16/2006 12:00:00 AM
Abstract :
An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fabricated. Embedded on a circuit in a multiplier block, the system exhibits state-of-the-art, flange-to-flange efficiency of 21% at 102 GHz. The maximum output power was 32 mW, which could be further increased by scaling and integration of the device.
Keywords :
III-V semiconductors; frequency multipliers; gallium arsenide; indium compounds; millimetre wave circuits; varactors; 102 GHz; 32 mW; InAlGaAs-InP; flange-to-flange efficiency; frequency multiplier; heterostructure barrier varactor tripler;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060277
