Title :
Charge-Collection and Single-Event Upset Measurements at the ISIS Neutron Source
Author :
Platt, Simon ; Torok, Zoltan ; Frost, Chris D. ; Ansell, Stuart
Author_Institution :
Sch. of Comput., Univ. of Central Lancashire, Preston
Abstract :
Charge-collection measurements at the VESUVIO instrument at ISIS are described. Neutron SEU cross sections in SRAM-based FPGAs are measured. Results are compared to equivalent data from Los Alamos Neutron Science Center ICE House. The rate of single-event effects due to fast neutrons at VESUVIO is approximately 15% of that at LANSCE. In addition there is a strong thermal and epithermal component, sufficient to cause many events in devices containing small amounts of 10B. The effects of low-energy neutrons on a commercial CCD contaminated with traces of 10B are described. Cadmium shielding is found to be incompletely effective in separating the effects of fast and slow neutrons, and the implications for testing protocols and instrument design are discussed.
Keywords :
SRAM chips; charge measurement; charge-coupled devices; field programmable gate arrays; logic design; ISIS neutron source; Los Alamos Neutron Science Center ICE House; SRAM-based FPGA; charge-collection measurements; commercial CCD; epithermal component; instrument design; single-event upset measurements; testing protocols; thermal component; Cadmium; Charge coupled devices; Current measurement; Field programmable gate arrays; Ice; Instruments; Intersymbol interference; Neutrons; Pollution measurement; Single event upset; Charge-coupled devices; dosimetry; field programmable gate arrays; neutron beams; neutron radiation effects; semiconductor device radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.918518
