Title :
InP Gunn devices for 400-425 GHz
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, UK
fDate :
3/16/2006 12:00:00 AM
Abstract :
InP Gunn devices with two similar graded doping profiles were evaluated for third-harmonic power extraction above 400 GHz. The oscillators used the configuration of a WR-6 waveguide cavity for the InP Gunn device and a WR-2 dielectric-filled conical horn with the appropriate waveguide transition for power measurements with a quasi-optical absolute power meter. The best devices yielded output power levels of 45 μW at 409 GHz, 40 μW at 412 GHz and 40 μW at 422 GHz.
Keywords :
Gunn devices; Gunn oscillators; III-V semiconductors; doping profiles; indium compounds; millimetre wave devices; waveguide transitions; 40 muW; 400 to 425 GHz; 45 muW; Gunn device; InP; dielectric-filled conical horn; doping profile; oscillator; power measurement; quasioptical absolute power meter; third-harmonic power extraction; waveguide cavity; waveguide transition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060218
