Title :
A bipolar four-phase dynamic shift register
Author :
Kasperkovitz, D.
Abstract :
A 512-b dynamic shift register is integrated on 6.4-mm/SUP 2/ active chip area. The frequency range is from 100 Hz to 3 MHz. At 1 MHz the power dissipation is 20 mW. The performance of the shift register is insensitive to spread in process parameters because the information is regenerated in each cell. The comparison of the measured and the calculated working range shows the essential influence of all parasitic capacitances.
Keywords :
Bipolar transistors; Capacitance; Digital integrated circuits; Shift registers; bipolar transistors; capacitance; digital integrated circuits; shift registers; Computer aided manufacturing; Delay lines; Education; Electrical engineering; Electron devices; Laboratories; Physics; Shift registers; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050415
