Title :
Semiconductor quantum devices
Author :
Cahay, Marc ; Bandyopadhyay, Supriyo
Author_Institution :
Cincinnati Univ., OH, USA
Abstract :
The operation of devices with small enough dimensions for electrons to exhibit wavelike behavior is explained. Two types of device are examined: vertical quantum devices, which include the resonant tunneling structure and the single-electron transistor, and lateral, which include the quantum interference transistor and the spin precession device. The advantages and drawbacks of the two types are identified.<>
Keywords :
quantum interference devices; resonant tunnelling devices; semiconductor quantum wells; advantages; drawbacks; lateral quantum devices; quantum interference transistor; resonant tunneling structure; semiconductor quantum devices; single-electron transistor; spin precession device; vertical quantum devices; Atomic layer deposition; Electrons; Lithography; Molecular beam epitaxial growth; Optical devices; Phonons; Quantum mechanics; Semiconductor thin films; Temperature; Ultra large scale integration;
Journal_Title :
Potentials, IEEE
