DocumentCode
878386
Title
Semiconductor quantum devices
Author
Cahay, Marc ; Bandyopadhyay, Supriyo
Author_Institution
Cincinnati Univ., OH, USA
Volume
12
Issue
1
fYear
1993
Firstpage
18
Lastpage
23
Abstract
The operation of devices with small enough dimensions for electrons to exhibit wavelike behavior is explained. Two types of device are examined: vertical quantum devices, which include the resonant tunneling structure and the single-electron transistor, and lateral, which include the quantum interference transistor and the spin precession device. The advantages and drawbacks of the two types are identified.<>
Keywords
quantum interference devices; resonant tunnelling devices; semiconductor quantum wells; advantages; drawbacks; lateral quantum devices; quantum interference transistor; resonant tunneling structure; semiconductor quantum devices; single-electron transistor; spin precession device; vertical quantum devices; Atomic layer deposition; Electrons; Lithography; Molecular beam epitaxial growth; Optical devices; Phonons; Quantum mechanics; Semiconductor thin films; Temperature; Ultra large scale integration;
fLanguage
English
Journal_Title
Potentials, IEEE
Publisher
ieee
ISSN
0278-6648
Type
jour
DOI
10.1109/45.207169
Filename
207169
Link To Document