DocumentCode :
878408
Title :
A proposed p-n junction cathode
Author :
Geppert, D.V.
Volume :
54
Issue :
1
fYear :
1966
Firstpage :
61
Lastpage :
61
Keywords :
Cathodes; Doping; Electrons; Gallium arsenide; P-n junctions; Semiconductor diodes; Semiconductor thin films; Silicon; Surface treatment; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4580
Filename :
1446510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=878408
