The effect of 1300-1380 degrees C anneal temperatures and material contamination on the characteristics of CMOS/SIMOX devices

Author

Jastrzebski, L. ; Ipri, Alfred C.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

9

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

151

Lastpage

153

Abstract

The characteristics of CMOS transistors fabrication on silicon implanted with oxygen (SIMOX) materials were measured as a function of the silicon superficial layer contamination levels. In addition, postimplant anneal temperatures of 1300 degrees C, 1350 degrees C, and 1380 degrees C were examined. It is found that the transistor leakage currents as well as the integrity of the gate oxide and implanted SIMOX oxide are functions of the carbon content in the starting material. Leakage currents below 1.0*10/sup -12/ A/ mu m of channel width have been measured when the carbon concentration is reduced to 2*10/sup 18//cm/sup 2/. In addition, the integrity of the transistor gate dielectric, SIMOX implanted oxide, and oxygen precipitate density are seen to be a function of the postimplant anneal temperature. A gate dielectric breakdown field of 10 MV/cm has been achieved when the postimplant temperature is increased to 1380 degrees C.<>

Keywords

CMOS integrated circuits; annealing; electric breakdown of solids; 1300 to 1380 degC; CMOS/SIMOX devices; anneal temperatures; carbon content; characteristics; dielectric breakdown field; gate dielectric; gate oxide; leakage currents; material contamination; oxygen precipitate density; postimplant anneal; superficial layer; Annealing; Contamination; Current measurement; Dielectric materials; Fabrication; Leakage current; Organic materials; Pollution measurement; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2072

Filename

2072