DocumentCode :
878442
Title :
High-efficiency avalanche-resonance pumped amplification
Author :
Hoefflinger, B. ; Snapp, C.P. ; Stark, L.A.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Volume :
5
Issue :
3
fYear :
1969
Firstpage :
43
Lastpage :
45
Abstract :
Microwave amplification has been obtained from silicon diodes operated in avalanche-resonance pumped modes. D.C.-r.f. conversion efficiencies were 25% at 1.3GHz for a saturation gain of 12dB and a bandwidth of 3%.
Keywords :
high-frequency amplifiers; microwave devices; semiconductor diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690029
Filename :
4210248
Link To Document :
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