Title :
High-gain multi-finger power n-MODFET on Si substrate
Author :
Yuan, H.-C. ; Jiang, N. ; Ma, Z. ; Croke, E.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
3/16/2006 12:00:00 AM
Abstract :
A multi-finger n-type Si/SiGe modulation-doped field-effect transistor fabricated on Si substrate for RF power amplification is demonstrated for the first time. Load-pull measurements performed at 2 GHz on a ten-finger device with a gate length of 0.3 μm and a gate width of 750 μm show a maximum output power of 14 dBm and power gain of 16 dB at 1 dB compression point with power added efficiency of 15%.
Keywords :
Ge-Si alloys; UHF field effect transistors; power HEMT; silicon; substrates; 0.3 micron; 15 percent; 16 dB; 2 GHz; 750 micron; DC operation; RF power amplification; Si substrate; Si-SiGe; high-gain multi-finger power n-MODFET; large-signal operation; load-pull measurements; maximum output power; modulation-doped field-effect transistor; power added efficiency; power gain; small-signal operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064041
