Title :
Numerical calculations of the capacitance of linearly graded Si p-n junctions
Author :
Nuyts, W. ; Overstraeten, R. J Van
Author_Institution :
Katholieke Universiteit Leuven, Laboratorium voor Fysika en Elektronica van de Halfgeleiders, Departement Elektriciteit, Heverlee, Belgium
Abstract :
Exact calculations are made of the capacitance of linearly graded Si p-n junctions, taking the influence of electrons and holes into account. The results agree well with the experimental data for gradients of less than 1022cm¿4. The discrepancies for gradients larger than 1022cm¿4 are probably due an interface-state mechanism.
Keywords :
capacitance; semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690037
