DocumentCode :
878706
Title :
A new insulated-gate silicon transistor
Author :
Tombs, N.C. ; Wegener, H.A.R. ; Newman, Robert
Volume :
54
Issue :
1
fYear :
1966
Firstpage :
87
Lastpage :
88
Keywords :
Capacitance; Dielectric breakdown; Dielectric materials; Dielectrics and electrical insulation; Doping; Fabrication; Impurities; Semiconductor materials; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4607
Filename :
1446537
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=878706
