DocumentCode
878943
Title
Summation of Gaussians for ion-implantation profile control
Author
Allen, R.M.
Author_Institution
Services Electronics Research Laboratory, Baldock, UK
Volume
5
Issue
6
fYear
1969
Firstpage
111
Lastpage
112
Abstract
Conditions are given under which ions of a single energy produce doping profiles close to Gaussian. Methods of Gaussian summation are discussed. A computer program is described which selects optimum energies for fit to predetermined profiles. Energy-dose data are given for a uniform profile of various dopants in silicon.
Keywords
semiconductor doping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690084
Filename
4210299
Link To Document