Title :
Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET
Author :
Gouker, P. ; Burns, J. ; Wyatt, P. ; Warner, K. ; Austin, E. ; Milanowski, R.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.
Keywords :
MOSFET; X-ray effects; buried layers; isolation technology; leakage currents; radiation hardening (electronics); silicon-on-insulator; FDSOI NMOSFET; X-ray irradiation; X-ray source; buried oxide thinning; edge-induced leakage current; mesa isolation; radiation test; radiation tolerance; substrate removal; total dose radiation effects; total dose tolerance; FETs; Fabrication; Ionizing radiation; Leakage current; MOSFET circuits; Radiation effects; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage; Transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821822
