DocumentCode
879059
Title
Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET
Author
Gouker, P. ; Burns, J. ; Wyatt, P. ; Warner, K. ; Austin, E. ; Milanowski, R.
Author_Institution
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Volume
50
Issue
6
fYear
2003
Firstpage
1776
Lastpage
1783
Abstract
We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.
Keywords
MOSFET; X-ray effects; buried layers; isolation technology; leakage currents; radiation hardening (electronics); silicon-on-insulator; FDSOI NMOSFET; X-ray irradiation; X-ray source; buried oxide thinning; edge-induced leakage current; mesa isolation; radiation test; radiation tolerance; substrate removal; total dose radiation effects; total dose tolerance; FETs; Fabrication; Ionizing radiation; Leakage current; MOSFET circuits; Radiation effects; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage; Transistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.821822
Filename
1263799
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