• DocumentCode
    879072
  • Title

    Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors

  • Author

    Sugimoto, M. ; Kosaka, Hideo ; Kurihara, Keiichirou ; Ogura, I. ; Numai, Takahiro ; Kasahara, K.

  • Author_Institution
    Optoelectron. Res. Labs., NEC Corp., Tsukuba, Japan
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    385
  • Lastpage
    387
  • Abstract
    A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.
  • Keywords
    distributed Bragg reflector lasers; doping profiles; semiconductor junction lasers; electrical resistivity; periodically doped distributed Bragg reflectors; threshold current density; vertical-cavity surface-emitting laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920241
  • Filename
    126380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879072