Title :
Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors
Author :
Sugimoto, M. ; Kosaka, Hideo ; Kurihara, Keiichirou ; Ogura, I. ; Numai, Takahiro ; Kasahara, K.
Author_Institution :
Optoelectron. Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.
Keywords :
distributed Bragg reflector lasers; doping profiles; semiconductor junction lasers; electrical resistivity; periodically doped distributed Bragg reflectors; threshold current density; vertical-cavity surface-emitting laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920241
