Title :
Proton tolerance of third-generation, 0.12 μm 185 GHz SiGe HBTs
Author :
Lu, Yuan ; Cressler, John D. ; Krithivasan, Ramkumar ; Li, Ying ; Reed, Robert A. ; Marshall, Paul W. ; Polar, Christopher ; Freeman, Greg ; Ahlgren, David
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present results on the impact of proton irradiation on the dc and ac characteristics of third-generation, 0.12 μm 185 GHz SiGe HBTs. Comparisons with prior technology generations are used to assess how the structural changes needed to enhance performance between second and third generation technology couple to the observed proton response. The results demonstrate that SiGe HBT technologies can successfully maintain their a Mrad-level total dose hardness, without intentional hardening, even when vertically-scaled in order to achieve unprecedented levels of transistor performance.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; millimetre wave bipolar transistors; proton effects; radiation hardening (electronics); 185 GHz; AC characteristics; DC characteristics; Gummel characteristics; S-parameters; SiGe; inverse-mode characteristics; proton irradiation; structural changes; third-generation HBT; total dose hardness; Application specific integrated circuits; CMOS technology; Cutoff frequency; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Protons; Silicon germanium; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820737
